A study of self-aligned doped channel MOSFET structure for...

Solid-State Electronics 1999 Vol. 43; Iss. 7

A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation

Takashi Yoshitomi, Hideki Kimijima, Shinnichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Eiji Morifuji, Toyota Morimoto, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai
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Volume:
43
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(99)00066-0
File:
PDF, 156 KB
english, 1999
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