Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction
Victor Sonnenberg, João Antonio MartinoVolume:
43
Year:
1999
Language:
english
Pages:
9
DOI:
10.1016/s0038-1101(99)00191-4
File:
PDF, 221 KB
english, 1999