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Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation
M. Hossin, C.M. Johnson, N.G. Wright, A.G. O’NeillVolume:
44
Year:
2000
Language:
english
Pages:
10
DOI:
10.1016/s0038-1101(99)00211-7
File:
PDF, 290 KB
english, 2000