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4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
Anant K Agarwal, Suresh Seshadri, Michael MacMillan, Sita S Mani, Jeffrey Casady, Phillip Sanger, Pankaj ShahVolume:
44
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(99)00236-1
File:
PDF, 421 KB
english, 2000