Soft breakdown in very thin Ta2O5 gate dielectric layers

Solid-State Electronics 2000 Vol. 44; Iss. 3

Soft breakdown in very thin Ta2O5 gate dielectric layers

M Houssa, P.W Mertens, M.M Heyns, J.S Jeon, A Halliyal, B Ogle
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Volume:
44
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(99)00263-4
File:
PDF, 198 KB
english, 2000
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