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An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs
Rimon Ikeno, Masaaki AokiVolume:
44
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0038-1101(99)00299-3
File:
PDF, 358 KB
english, 2000