Stacking rearrangement at...

Stacking rearrangement at 6H–SiC(0 0 0 1) surfaces during thermal hydrogenation

Th. Seyller, N. Sieber, T. Stark, L. Ley, C.A. Zorman, M. Mehregany
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Volume:
532-535
Year:
2003
Language:
english
Pages:
7
DOI:
10.1016/s0039-6028(03)00157-2
File:
PDF, 1.71 MB
english, 2003
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