Selective epitaxy growth of Si1−xGexlayers for MOSFETs and...

Selective epitaxy growth of Si1−xGexlayers for MOSFETs and FinFETs

Radamson, Henry H., Kolahdouz, Mohammadreza
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Volume:
26
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-015-3123-z
Date:
July, 2015
File:
PDF, 3.07 MB
english, 2015
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