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Evaluation of AlInN∕GaN HEMTs on sapphire substrate in microwave, time and temperature domains
Medjdoub, F., Ducatteau, D., Gaquière, C., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., Kohn, E.Volume:
43
Year:
2007
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20073170
File:
PDF, 162 KB
english, 2007