Modification of Early Effect for 28-nm nMOSFETs Deposited...

IEEE Transactions on Plasma Science 2014 / 12 Vol. 42; Iss. 12

Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations

Lee, Win-Der, Wang, Mu-Chun, Wang, Shea-Jue, Lan, Wen-How, Li, Chao-Wang, Yang, Bor-Wen
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Volume:
42
Language:
english
Journal:
IEEE Transactions on Plasma Science
DOI:
10.1109/tps.2014.2357024
Date:
December, 2014
File:
PDF, 1.75 MB
english, 2014
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