High-Quality InGaN Films Grown on Ga-Polarity GaN by...

Japanese Journal of Applied Physics 2000 / 12 Vol. 39; Iss. Part 2, No

High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy

Shen, Xu-Qiang, Ide, Toshihide, Shimizu, Mitsuaki, Hara, Shiro, Okumura, Hajime
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.l1270
Date:
December, 2000
File:
PDF, 124 KB
english, 2000
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