Reduction of Interfacial Carbon and Boron Contamination as...

Solid State Phenomena 1993 Vol. 32-33

Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE

Zeindl, H.P., Lippert, G., Drews, J., Kurps, R., Osten, H.J.
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Volume:
32-33
Year:
1993
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/ssp.32-33.117
File:
PDF, 384 KB
1993
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