Stability of AlGaN∕GaN high-power HEMTs under DC and RF...

Electronics Letters 2004 Vol. 40; Iss. 19

Stability of AlGaN∕GaN high-power HEMTs under DC and RF stresses

Zhang, A.P., Kaminsky, E.B., Allen, A.F., Hedrick, J.W., Vertiatchikh, A., Eastman, L.F.
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Volume:
40
Year:
2004
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20045932
File:
PDF, 67 KB
english, 2004
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