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High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
Werquin, M., Gaquiére, C., Guhel, Y., Vellas, N., Theron, D., Boudart, B., Hoel, V., Germain, M., De Jaeger, J.C., Delage, S.Volume:
41
Year:
2005
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20056735
File:
PDF, 71 KB
english, 2005