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A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
Yu, M H, Liao, M H, Huang, T C, Wang, L T, Lee, T L, Jang, S M, Cheng, H CVolume:
45
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/45/49/495102
Date:
December, 2012
File:
PDF, 728 KB
english, 2012