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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique
Tang, Cen, Xie, Gang, Sheng, KuangYear:
2015
Language:
english
DOI:
10.1109/ispsd.2015.7123432
File:
PDF, 400 KB
english, 2015