High Temperature Simulation of 4H-SiC Bipolar Circuits

High Temperature Simulation of 4H-SiC Bipolar Circuits

Elgabra, Hazem, Singh, Shakti
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Volume:
3
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2015.2407380
Date:
May, 2015
File:
PDF, 809 KB
english, 2015
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