Capacitance and Conductance for an MOS System in Inversion,...

IEEE Transactions on Electron Devices 2014 / 12 Vol. 61; Iss. 12

Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions

Monaghan, Scott, O'Connor, Eamon, Rios, Rafael, Ferdousi, Fahmida, Floyd, Liam, Ryan, Eimear, Cherkaoui, Karim, Povey, Ian M., Kuhn, Kelin J., Hurley, Paul K.
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2362524
Date:
December, 2014
File:
PDF, 1.42 MB
english, 2014
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