Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 03 Vol. 33; Iss. 2
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Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach
Wu, Qian, Porti, Marc, Bayerl, Albin, Martin-Martínez, Javier, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Simoen, EddyVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4913950
Date:
March, 2015
File:
PDF, 1.29 MB
english, 2015