Channel-hot-carrier degradation of strained MOSFETs: A...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 03 Vol. 33; Iss. 2

Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Wu, Qian, Porti, Marc, Bayerl, Albin, Martin-Martínez, Javier, Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Simoen, Eddy
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4913950
Date:
March, 2015
File:
PDF, 1.29 MB
english, 2015
Conversion to is in progress
Conversion to is failed