Stress Adjustment and Bonding of H-Implanted 2 in....

Electrochemical and Solid-State Letters 2009 Vol. 12; Iss. 4

Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting

Moutanabbir, O., Senz, S., Scholz, R., Christiansen, S., Reiche, M., Avramescu, A., Strauss, U., Gösele, U.
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Volume:
12
Year:
2009
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3066081
File:
PDF, 403 KB
english, 2009
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