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Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon
Kyaw, L. M., Dolmanan, S. B., Bera, M. K., Liu, Y., Tan, H. R., Bhat, T. N., Dikme, Y., Chor, E. F., Tripathy, S.Volume:
3
Language:
english
Journal:
ECS Solid State Letters
DOI:
10.1149/2.008402ssl
Date:
December, 2013
File:
PDF, 1.13 MB
english, 2013