GaN substrate and GaN homo-epitaxy for LEDs: Progress and...

Chinese Physics B 2015 / 06 Vol. 24; Iss. 6

GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

Wu, Jie-Jun, Wang, Kun, Yu, Tong-Jun, Zhang, Guo-Yi
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/6/068106
Date:
June, 2015
File:
PDF, 917 KB
english, 2015
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