Physical origin of gate voltage-dependent drain–source...

Physical origin of gate voltage-dependent drain–source capacitance in short-channel MOSFETs

Hong, Seoyoung, Lee, Seonghearn
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Volume:
50
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2014.2971
Date:
November, 2014
File:
PDF, 494 KB
english, 2014
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