Silicon nanowire formed via shallow anisotropic etching...

Chinese Physics B 2015 / 06 Vol. 24; Iss. 6

Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

Adam, Tijjani, HAshim, U., Dhahi, Th S.
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/6/068102
Date:
June, 2015
File:
PDF, 713 KB
english, 2015
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