[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)
Hartmann, Jean-Michel, Baud, L., Rolland, Guy, Fabbri, J. M., Billon, ThierryVolume:
3
Year:
2006
Language:
english
DOI:
10.1149/1.2355814
File:
PDF, 1.01 MB
english, 2006