(Invited) Interface Trap Densities and Admittance Characteristics of III-V MOS Capacitors
Stemmer, S., Chobpattana, V., Son, J., Rajan, S.Volume:
50
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05004.0141ecst
Date:
March, 2013
File:
PDF, 130 KB
english, 2013