Improved performance of 1.3  m InGaAsP–InP lasers with an...

Semiconductor Science and Technology 2003 / 11 Vol. 18; Iss. 11

Improved performance of 1.3  m InGaAsP–InP lasers with an AlInAs electron stopper layer

Jin, Jinyan, Tian, Decheng
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Volume:
18
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/18/11/309
Date:
November, 2003
File:
PDF, 74 KB
english, 2003
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