International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2015 / 03 Vol. 28; Iss. 2
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A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs
Xi, Liu, Xiao-Shi, Jin, Chuai, Rongyan, Jong-Ho, LeeVolume:
28
Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.2001
Date:
March, 2015
File:
PDF, 607 KB
english, 2015