High temperature performances of normally-off p-GaN gate...

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Microelectronics Reliability 2015 / 6

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément, Capriotti, Mattia, Rigato, Matteo, Hilt, Oliver, Würfl, Joachim, Derluyn, Joff, Steinhauer, Stephan, Köck, Anton, Strasser, Gottfried, Pogany, Dionyz
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.06.010
Date:
June, 2015
File:
PDF, 1.15 MB
english, 2015
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