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Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process
Park, B.-R., Lee, J.-G., Lee, H.-J., Lim, J., Seo, K.-S., Cha, H.-Y.Volume:
48
Year:
2012
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2011.3778
File:
PDF, 263 KB
english, 2012