Characteristics of laser-produced Ge ion fluxes used for...

Radiation Effects and Defects in Solids 2005 / 10 Vol. 160; Iss. 10-12

Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials

Wołowski, J., Badziak, J., Czarnecka, A., Boody, F.P., Gammino, S., Krása, J., Láska, L., Mezzasalma, A., Parys, P., Rosiński, M., Rohlena, K., Torrisi, L., Ullschmied, J.
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Volume:
160
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420150500492156
Date:
October, 2005
File:
PDF, 273 KB
english, 2005
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