First 0.18 μm SBT-Based Embedded FeRAM Technology with...

Integrated Ferroelectrics 2003 / 03 Vol. 53; Iss. 1

First 0.18 μm SBT-Based Embedded FeRAM Technology with Hydrogen Damage Free Stacked Cell Structure

Fujii, Eiji, Uchiyama, Kiyoshi
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Volume:
53
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584580390258246
Date:
March, 2003
File:
PDF, 245 KB
english, 2003
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