Effects of Postannealing Temperature on the Band Alignments and Interfacial Properties of Atomic Layer Deposited Al 2 O 3 on Ge Substrates
Li, Xue-Fei, Liu, Xiao-Jie, Fu, Ying-Ying, Li, Ai-Dong, Li, Hui, Wu, DiVolume:
134
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584587.2012.663653
Date:
January, 2012
File:
PDF, 493 KB
english, 2012