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Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication
Ma, Xue-Zhi, Zhang, Rui, Sun, Jia-Bao, Shi, Yi, Zhao, YiVolume:
32
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307x/32/4/045202
Date:
April, 2015
File:
PDF, 837 KB
english, 2015