Use of hydrogen etching to remove existing dislocations in...

Semiconductor Science and Technology 2015 / 08 Vol. 30; Iss. 8

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

Yeh, Yen-Hsien, Chu, Chung-Ming, Wu, Yin-Hao, Hsu, Ying-Chia, Yu, Tzu-Yi, Lee, Wei-I
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/8/085002
Date:
August, 2015
File:
PDF, 1.64 MB
english, 2015
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