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Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs
Choi, Hyunjun, Lee, Jungmin, Bae, Hagyoul, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong MyongVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2443492
Date:
August, 2015
File:
PDF, 1.67 MB
english, 2015