Strain relaxation and dislocation filtering in metamorphic...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2001 Vol. 19; Iss. 4

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchi
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Volume:
19
Year:
2001
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1376384
File:
PDF, 794 KB
english, 2001
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