Effect of different loss mechanisms in SiGeSn based...

Semiconductors 2015 / 6 Vol. 49; Iss. 6

Effect of different loss mechanisms in SiGeSn based mid-infrared laser

Chakraborty, Vedatrayee, Mukhopadhyay, Bratati, Basu, P. K.
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Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s1063782615060081
Date:
June, 2015
File:
PDF, 288 KB
english, 2015
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