Quantitative description of the properties of extended...

Semiconductors 2015 / 6 Vol. 49; Iss. 6

Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

Shabelnikova, Ya. L., Yakimov, E. B., Nikolaev, D. P., Chukalina, M. V.
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Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s1063782615060226
Date:
June, 2015
File:
PDF, 1.10 MB
english, 2015
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