A Physics-Based Effective Mobility Model for...

Japanese Journal of Applied Physics 2011 / 9 Vol. 50; Iss. 9

A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries

Yan, Bing-Hui, Li, Bin, Yao, Ruo-He, Wu, Wei-Jing
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.094302
Date:
September, 2011
File:
PDF, 658 KB
english, 2011
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