Impact of the Low Temperature Gate Dielectrics on Device...

ECS Journal of Solid State Science and Technology 2015 / 06 Vol. 4; Iss. 8

Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors

Nag, M., Bhoolokam, A., Steudel, S., Genoe, J., Groeseneken, G., Heremans, P.
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Volume:
4
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0121508jss
Date:
June, 2015
File:
PDF, 515 KB
english, 2015
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