Analysis of single- and double-barrier tunneling diode...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF 2 /CdF 2 /Si multilayered heterostructures grown on Si

Suda, Keita, Kuwata, Yuya, Watanabe, Masahiro
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DJ05
Date:
April, 2015
File:
PDF, 420 KB
english, 2015
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