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Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Węgierek, P., Billewicz, P.Volume:
125
Language:
english
Journal:
Acta Physica Polonica A
DOI:
10.12693/aphyspola.125.1392
Date:
June, 2014
File:
PDF, 551 KB
english, 2014