Changes in the Activation Energy of Radiation Defects in...

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

Węgierek, P., Billewicz, P.
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Volume:
125
Language:
english
Journal:
Acta Physica Polonica A
DOI:
10.12693/aphyspola.125.1392
Date:
June, 2014
File:
PDF, 551 KB
english, 2014
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