Effects of Ultrathin Al Layer Insertion on Resistive...

Applied Physics Express 2010 / 8 Vol. 3; Iss. 9

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

Song, Jaehoon, Inamdar, Akbar I., Jang, ByeongUk, Jeon, Kiyoung, Kim, YoungSam, Jung, Kyooho, Kim, Yongmin, Im, Hyunsik, Jung, Woong, Kim, Hyungsang, Hong, J. P.
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Volume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.3.091101
Date:
August, 2010
File:
PDF, 413 KB
english, 2010
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