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Role of Nitrogen Incorporation into Hf-Based High- k Gate Dielectrics for Termination of Local Current Leakage Paths
Watanabe, Heiji, Kamiyama, Satoshi, Umezawa, Naoto, Shiraishi, Kenji, Yoshida, Shiniti, Watanabe, Yasumasa, Arikado, Tsunetoshi, Chikyow, Toyohiro, Yamada, Keisaku, Yasutake, KiyoshiVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.L1333
Date:
October, 2005
File:
PDF, 249 KB
english, 2005