Role of Nitrogen Incorporation into Hf-Based High-...

Japanese Journal of Applied Physics 2005 / 10 Vol. 44; Iss. No. 43

Role of Nitrogen Incorporation into Hf-Based High- k Gate Dielectrics for Termination of Local Current Leakage Paths

Watanabe, Heiji, Kamiyama, Satoshi, Umezawa, Naoto, Shiraishi, Kenji, Yoshida, Shiniti, Watanabe, Yasumasa, Arikado, Tsunetoshi, Chikyow, Toyohiro, Yamada, Keisaku, Yasutake, Kiyoshi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.L1333
Date:
October, 2005
File:
PDF, 249 KB
english, 2005
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