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Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy
Noh, Young-Kyun, Kwon, Han-Chul, Oh, Jae-Eung, Lee, Sang-Tae, Kim, Moon-DeockVolume:
66
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.66.1766
Date:
June, 2015
File:
PDF, 805 KB
english, 2015