Compact modeling of subthreshold swing in double gate and...

Solid-State Electronics 2015 / 09 Vol. 111

Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

Hiblot, G., Rafhay, Q., Boeuf, F., Ghibaudo, G.
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Volume:
111
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.06.008
Date:
September, 2015
File:
PDF, 1.09 MB
english, 2015
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