Improvement of High-Frequency Characteristics of...

IEEE Electron Device Letters 2015 / 7 Vol. 36; Iss. 7

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Kashio, Norihide, Hoshi, Takuya, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2429142
Date:
July, 2015
File:
PDF, 761 KB
english, 2015
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