Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon...

Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

G. Wöhl, V. Dudek, M. Graf, H. Kibbel, H.-J. Herzog, M. Klose
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Volume:
369
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0040-6090(00)00801-4
File:
PDF, 758 KB
english, 2000
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