Properties of optically active Si:Er and Si1−xGex layers grown by the sublimation MBE method
M.V. Stepikhova, B.A. Andreev, V.B. Shmagin, Z.F. Krasil'nik, V.P. Kuznetsov, V.G. Shengurov, S.P. Svetlov, W. Jantsch, L. Palmetshofer, H. EllmerVolume:
369
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(00)00906-8
File:
PDF, 138 KB
english, 2000